<p>4 Amps, 900 Volts N-CHANNEL POWER MOSFET</p><p><br/></p><p>DESCRIPTION</p><p><br/></p><p>The UTC 4N90 is a N-channel enhancement MOSFET adopting</p><p>UTC’s advanced technology to provide customers with DMOS lt;/p><p>planar stripe technology. This technology is designed to meet the</p><p>requirements of the minimum on-state resistance and perfect</p><p>switching performance. It also can withstand high energy pulse in</p><p>the avalanche and communication mode. </p><p> The UTC 4N90 is particularly applied in high efficiency switch</p><p>mode power supplies. </p><p><br/></p><p> FEATURES</p><p><br/></p><p> VDS=900V</p><p> ID=4A</p><p> RDS=4.2? @ VGS=10V</p><p> Typically 17nC low gate charge</p><p> High switching speed</p><p> Typically 5.6pF low CRSS </p><p> 100 avalanche tested</p><p> Improved dv/dt capability</p><p><br/></p>
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